Dark current in monolithic extended-SWIR GeSn PIN photodetectors
نویسندگان
چکیده
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject extensive investigations because their bandgap tunability compatibility. However, due growth defects, these suffer a relatively high dark current density as compared commercial III-V PDs. Herein, we elucidate mechanisms governing in $2.6 \, \mu$m at Sn content $10$ at.%. It was found that temperature range $293 $K -- $363 \,$K low bias, diffusion Shockley-Read-Hall (SRH) leakage dominate small diameter ($20 \mu$m) devices, while combined SRH trap assisted tunneling (TAT) are prominent larger ($160 devices. reverse TAT mechanism becomes dominant regardless operating device size. effective non-radiative carrier lifetime devices reach $\sim 300$ $400$ ps bias. Owing current, however, reduces progressively bias increases.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2023
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0124720